PSMN7R0-60YS,115 Nexperia

PSMN7R0-60YS,115 electronic component of Nexperia
PSMN7R0-60YS,115 Nexperia
PSMN7R0-60YS,115 MOSFETs
PSMN7R0-60YS,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN7R0-60YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN7R0-60YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN7R0-60YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single N-Channel 60V 356A 117W 9.3mOhms
Datasheet: PSMN7R0-60YS,115 Datasheet (PDF)
Price (USD)
1: USD 2.4264 ea
Line Total: USD 2.43 
Availability : 1155
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
1$ 2.4264
10$ 1.5415
30$ 1.2497
100$ 1.0932
500$ 1.0244
1500$ 0.9932

Availability 1155
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.4264
10$ 1.5415
30$ 1.2497
100$ 1.0932
500$ 1.0244
1500$ 0.9932

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN7R0-60YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R0-60YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m standard level MOSFET Rev. 02 30 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =10V --89 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --117 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 143 mJ DS(AL)S GS j(init) drain-source I = 89.1 A V 60 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =60A -9.6 -nC GD GS D V = 30 V see Figure 14 DS Q total gate charge - 45 - nC G(tot) and 15PSMN7R0-60YS Nexperia N-channel LFPAK 60 V 6.4 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A - - 10.2 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 4.95 6.4 m GS D T = 25 C see Figure 13 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-60YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN7R0-60YS 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 30 March 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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