Product Information

PSMN6R5-80BS,118

PSMN6R5-80BS,118 electronic component of Nexperia

Datasheet
MOSFET N-CH 80 V 46 MOHM MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4800: USD 1.0619 ea
Line Total: USD 5097.12

0 - Global Stock
MOQ: 4800  Multiples: 4800
Pack Size: 4800

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 3.1678
10 : USD 2.535
100 : USD 2.0195
500 : USD 1.9094
1000 : USD 1.8687

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 4800
Multiples : 4800
4800 : USD 1.0293
9600 : USD 1.0293

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 2.786
5 : USD 2.492
9 : USD 1.8732
24 : USD 1.771

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN6R5-80BS N-channel 80V 6.9m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j 1 I drain current T =25C V =10V see Figure 1 - - 100 A D mb GS P total power dissipation T =25C see Figure 2 - - 210 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A T =25C -5.9 6.9 m DSon GS D j resistance see Figure 13 Dynamic characteristics gate-drain charge V =10V I =25A V =40V -16 -nC Q GD GS D DS see Figure 14 see Figure 15 total gate charge - 71 - nC Q G(tot) Avalanche ruggedness non-repetitive V =10V T =25C I =49A - - 700 mJ E DS(AL)S GS j(init) D drain-source V 80 V R =50 unclamped sup GS avalanche energy 1 Continuous current rating is limited by package.PSMN6R5-80BS Nexperia N-channel 80V 6.9m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R5-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -82 A D GS mb 1 V =10V T =25C see Figure 1 - 100 A GS mb I peak drain current pulsed t 10 s T = 25 C see Figure 3 - 470 A DM p mb P total power dissipation T =25C see Figure 2 - 210 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T = 25 C - 100 A S mb I peak source current pulsed t 10 s T = 25 C - 470 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =49A V 80 V - 700 mJ DS(AL)S GS j(init) D sup avalanche energy R =50 unclamped GS 1 Continuous current rating is limited by package. PSMN6R5-80BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 2 March 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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