PSMN6R5-25YLC,115 Nexperia

PSMN6R5-25YLC,115 electronic component of Nexperia
PSMN6R5-25YLC,115 Nexperia
PSMN6R5-25YLC,115 MOSFETs
PSMN6R5-25YLC,115  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN6R5-25YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN6R5-25YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN6R5-25YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-chnl25V6.5m logic lvl MOSFET in LFPAK
Datasheet: PSMN6R5-25YLC,115 Datasheet (PDF)
Price (USD)
1605: USD 0.2923 ea
Line Total: USD 469.14 
Availability : 4365
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
1605$ 0.2923
10000$ 0.2605
100000$ 0.2182

Availability 960
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 876
Multiples : 1
QtyUnit Price
876$ 0.2969


Availability 4365
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1605
Multiples : 1
QtyUnit Price
1605$ 0.2923
10000$ 0.2605
100000$ 0.2182


Availability 2910
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.2786
3000$ 0.2725
4500$ 0.2701
15000$ 0.2657
37500$ 0.2615

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN6R5-25YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN6R5-25YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN6R5-25YLC N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology Rev. 2 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Optimised for 4.5V Gate drive utilising qualified to 175C NextPower Superjunction technology Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j I drain current T =25C V = 10 V see Figure 1 --64 A D mb GS P total power dissipation T = 25 C see Figure 2 --48 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I =20A T =25C -7.3 8.5 m DSon GS D j resistance see Figure 12 V =10V I =20A T =25C -5.5 6.5 m GS D j see Figure 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I =20A V =12V -2.8 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 8.4 - nC G(tot)PSMN6R5-25YLC Nexperia N-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN6R5-25YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 25 V DS j V drain-gate voltage 25 C T 175 C R =20k -25 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 25 C see Figure 1 -64 A D GS mb V =10V T = 100 C see Figure 1 -45 A GS mb I peak drain current pulsed t 10 s T =25C - 256 A DM p mb see Figure 4 P total power dissipation T = 25 C see Figure 2 -48 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 240 - V ESD Source-drain diode I source current T =25C - 44 A S mb I peak source current pulsed t 10 s T = 25 C - 256 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =64A -18 mJ DS(AL)S GS j(init) D avalanche energy V 25 V unclamped R =50 sup GS see Figure 3 PSMN6R5-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 31 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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