X-On Electronics has gained recognition as a prominent supplier of PSMN7R0-30YLC,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN7R0-30YLC,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN7R0-30YLC,115 Nexperia

PSMN7R0-30YLC,115 electronic component of Nexperia
PSMN7R0-30YLC,115 Nexperia
PSMN7R0-30YLC,115 MOSFETs
PSMN7R0-30YLC,115  Semiconductors

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See Product Specifications
Part No. PSMN7R0-30YLC,115
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 30 V 61A (Tc) 48W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN7R0-30YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6762 ea
Line Total: USD 0.68 
Availability - 20135
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
20135
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.6762
10 : USD 0.5737
25 : USD 0.5244
100 : USD 0.3663
250 : USD 0.3608
500 : USD 0.3157
1000 : USD 0.2431
1500 : USD 0.2431
3000 : USD 0.2387

1433
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 1.19
5 : USD 0.84
25 : USD 0.7574
32 : USD 0.5964
87 : USD 0.5628

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PSMN7R0-30YLC,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R0-30YLC,115 and other electronic components in the MOSFETs category and beyond.

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PSMN7R0-30YLC N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =20A -2.5 -nC GD GS D V =15V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =20A -7.9 -nC G(tot) GS D V =15V see Figure 14 DS see Figure 15 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R0-30YLC LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669PSMN7R0-30YLC N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R =20k -30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 -61 A D GS mb V =10V T = 100 C see Figure 1 -43 A GS mb I peak drain current pulsed t 10 s T =25C - 245 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -48 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 190 - V ESD Source-drain diode I source current T =25C - 44 A S mb I peak source current pulsed t 10 s T = 25 C - 245 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =61A -15 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 003aag120 03na19 120 80 I D (A) P der (%) 60 80 40 40 20 0 0 0 50 100 150 200 0 50 100 150 200 T ( C) T (C) mb mb Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a mounting base temperature function of mounting base temperature Nexperia B.V. 2017. All rights reserved PSMN7R0-30YLC All information provided in this document is subject to legal disclaimers. Product data sheet Rev. 2 1 September 2011 3 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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