Product Information

PSMN7R5-30YLD

PSMN7R5-30YLD electronic component of NXP

Datasheet
MOSFET, N CH, 30V, 51A, POWER-SO-8
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5043 ea
Line Total: USD 0.5

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.5043
25 : USD 0.4377
100 : USD 0.3387
250 : USD 0.2895
500 : USD 0.2517
1500 : USD 0.2344

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
LoadingGif

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Additional Infomation About Product

PSMN7R5-30YLD N-channel 30 V, 7.5 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology 7 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 2 - - 51 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 34 W tot mb Scan or click this QR code to view the latest information for this product LFPAK56NXP Semiconductors PSMN7R5-30YLD N-channel 30 V, 7.5 m logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 10 A T = 25 C - 8.1 10.2 m DSon GS D j resistance Fig. 10 V = 10 V I = 15 A T = 25 C - 6.1 7.5 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 15 A V = 15 V - 1.7 - nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 15 A V = 15 V - 5.5 - nC G(tot) GS D DS Fig. 12 Fig. 13 Source-drain diode S softness factor I = 15 A V = 0 V dI /dt = -100 A/s - 1.3 - S GS S V = 15 V Fig. 16 DS 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R5-30YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN7R5-30YLD 7D530L PSMN7R5-30YLD All information provided in this document is subject to legal disclaimers. NXP N.V. 2014. All rights reserved Product data sheet 7 February 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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