Product Information

PSMN7R6-100BSE

PSMN7R6-100BSE electronic component of NXP

Datasheet
MOSFET, N-CH, 100V, 75A, D2PAK

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1773 ea
Line Total: USD 2.18

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 2.1773
25 : USD 2.0336
100 : USD 1.6783
250 : USD 1.4742
500 : USD 1.4062

     
Manufacturer
Product Category
Transistor Polarity
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
LoadingGif

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PSMN7R6-100BSE N-channel 100 V 7.6 m standard level MOSFET in D2PAK 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of NXP sNextPower Liv portfolio, the PSMN7R6-100BSE complements the latesthot- swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency up in DS(on) continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 100 C V = 10 V Fig. 1 1 - - 75 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 296 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 6.5 7.6 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 41 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 128 - nC G(tot) Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN7R6-100BSE N-channel 100 V 7.6 m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 75 A - - 426 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 1 Continuous current limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R6-100BSE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN7R6-100BSE PSMN7R6100BSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS PSMN7R6-100BSE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 18 December 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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