PXP1500-100QSJ Nexperia

PXP1500-100QS 100 V, P-channel Trench MOSFET 7 May 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface- Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology MLPAK33 package (3.3 x 3.3 mm footprint) Low thermal resistance Low 0.8 mm profile 3. Applications Active clamp circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -100 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -0.7 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -0.7 A T = 25 C - 930 1500 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PXP1500-100QS 100 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 3 4 1 S source D 2 S source G 3 S source 4 G gate S 5 D drain 017aaa094 6 D drain 8 7 6 5 7 D drain MLPAK33 (SOT8002-2) 8 D drain 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PXP1500-100QS MLPAK33 plastic thermal enhanced surface mounted package mini leads SOT8002-2 8 terminals pitch 0.65 mm 3.3 x 3.3 x 0.8 mm body 7. Marking Table 4. Marking codes Type number Marking code PXP1500-100QS 9AM PXP1500-100QS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 7 May 2020 2 / 14