NTE2322 Silicon PNP Transistor Quad, General Purpose Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA C Total Device Dissipation (T = +25C, Each Transistor), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/C Total Device Dissipation (T = +25C, Total Device), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9W A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125C stg Thermal Reistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66C/W thJA Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 10mA, I = 0, Note 1 40 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 30V, I = 0 50 nA CBO CB E Emitter Cutoff Current I V = 3V, I = 0 50 nA EBO EB E ON Characteristics (Note 1) DC Current Gain h V = 10V, I = 10mA 75 FE CE C V = 10V, I = 150mA 100 CE C V = 10V, I = 300mA 30 CE C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.4 V CE(sat) C B I = 300mA, I = 30mA 1.6 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 1.5 V BE(sat) C B I = 300mA, I = 30mA 2.6 V C B Note 1. Pulse test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit SmallSignal Characteristics Current GainBandwidth Product f V = 20V, I = 50mA, f = 100MHz 200 MHz T CE C Output Capacitance C V = 10V, I = 0, f = 1MHz 8 pF obo CB E Input Capacitance C V = 2V, I = 0, f = 1MHz 30 pF ibo EB C Pin Connection Diagram Collector Collector 1 14 Base 2 13 Base Emitter 3 12 Emitter N.C. 4 11 N.C. Emitter 5 10 Emitter Base 6 9 Base Collector 7 8 Collector 14 8 17 .785 (19.95) Max .300 (7.62) .200 (5.08) Max .099 (2.5) Min .100 (2.45) .600 (15.24)