X-On Electronics has gained recognition as a prominent supplier of NTE2504 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. NTE2504 bipolar transistors - bjt are a product manufactured by NTE. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

NTE2504

NTE2504 electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE2504
Manufacturer: NTE
Category:Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 25V; 2A; 1.2W; TO126
Datasheet: NTE2504 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 2.05 ea
Line Total: USD 51.25

Availability - 29
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
29 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 25
Multiples : 1
25 : USD 2.05
250 : USD 1.625
500 : USD 1.5375
1000 : USD 1.4875
2500 : USD 1.425
5000 : USD 1.3875
7500 : USD 1.375
10000 : USD 1.35

28 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.119
3 : USD 1.911
10 : USD 1.69
11 : USD 1.56
25 : USD 1.521

     
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We proudly offer the NTE2504 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTE2504 Bipolar Transistors - BJT.

NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: Large Current Capacity (I = 2A) C Adoption of MBIT Process High DC Current Gain: h = 800 to 3200 FE Low CollectorEmitter Saturation Voltage: V < 0.5V CE(sat) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 10V, I = 0 0.1 A EBO EB C DC Current Gain h V = 5V, I = 500mA 800 1500 3200 FE CE C Current GainBandwidth Product f V = 10V, I = 50mA 260 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 27 pF ob CE CollectorEmitter Saturation Voltage V I = 1A, I = 20mA 0.15 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 20mA 0.85 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 30 V (BR)CBO C E.315 (8.0) .106 (2.7) .433 (11.0) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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