NTE2503 Silicon NPN Transistor High Gain Switch Features: High DC Current Gain High Current Capacity Low CollectorEmitter Saturation Voltage High EmitterBase Voltage Applications: AF Amplifier Various Driver Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW C Operating Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 10V, I = 0 0.1 A EBO EB C DC Current Gain h I = 50mA, V = 5V 800 1500 3200 FE C CE I = 500mA, V = 5V 600 C CE Current GainBandwidth Product f I = 50mA, V = 10V 270 MHz T C CE Output Capacitance C V = 10V, f = 1MHz 9 pF ob CBElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Saturation Voltage V I = 500mA, I = 10mA 0.15 0.50 V CE(sat) C B Base Saturation Voltage V I = 500mA, I = 10mA 0.9 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10 A, I = 0 30 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 25 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10 A, I = 0 15 V (BR)EBO E C TurnOn Time t I = 100mA, 0.1 s on B1 I = I = 300mA, B2 C Storage Time t 0.6 s stg Pulse Width = 20Pulse Width = 20 s,s, Duty Cycle 1% Fall Time t 0.06 s f .135 (3.45) Min .210 (5.33) Max Seating Plane .500 .021 (.445) Dia Max (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max