NTE2922 NTE

NTE2922 MOSFET NCh, Enhancement Mode High Speed Switch TO3P Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated G Isolated Central Mounting Hole Fast Switching S Ease of Paralleling Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25C .................................................................. 16A C T = +100C ................................................................. 10A C Pulsed Drain Current (Note 1), I ................................................... 64A DM Power Dissipation (T = +25C), P ................................................ 180W C D GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 390mJ AS Avalanche Current (Note 1), I ...................................................... 16A AR Repetitive Avalanche Energy (Note 1), E .......................................... 19mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt ........................................... 4V/ns Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Thermal Resistance, Junction toCase, R ..................................... 0.7 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 30 C/W thJA Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25C, L = 2.7mH, R = 25, I = 16A DD J G AS Note 3. I 16A, di/dt 200A/s, V 400V, T +150 C SD DD J Rev. 1015Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DraintoSource Breakdown Voltage V V = 0V, I = 250A 400 V (BR)DSS GS D Breakdown Voltage Temp. Coefficient V Reference to +25 C, I = 1mA 0.51 V/C (BR)DSS D T J Static DraintoSource OnResistance R V = 10V, I = 8.9A 0.30 DS(on) GS D Gate Threshold Voltage V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 40V, I = 8A 8 S fs DS D DraintoSource Leakage Current I V = 400V, V = 0V 25 A DSS DS GS GatetoSource Forward Leakage I V = 20V, V = 0 100 nA GSS GS DS GatetoSource Reverse Leakage I V = 20V, V = 0 100 nA GSS GS DS Total Gate Charge Q 150 nC I = 16A, V = 320V, V = 10V, g D DS GS Note 4 GatetoSource Charge Q 23 nC gs GatetoDrain (Miller) Charge Q 80 nC gd TurnOn Delay Time t 16 ns V = 200V, I = 16A, R = 6.2, d(on) DD D G R = 12, Note 4 D Rise Time t 49 ns r TurnOff Delay Time t 87 ns d(off) Fall Time t 47 ns f Internal Drain Inductance L 5.0 nH Between lead, .250in. (6.0) mm from D package and center of die contact Internal Source Inductance L 13 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 2600 pF iss GS DS Output Capacitance C 660 pF oss Reverse Transfer Capacitance C 250 pF rss SourceDrain Ratings and Characteristics: Parameter Symbol Test Conditions Min Typ Max Unit Continuous Source Current (Body Diode) I 16 A S Pulsed Source Current (Body Diode) I Note 1 64 A SM Diode Forward Voltage V T = +25C, I = 16A, V = 0V 1.6 V SD J S GS Reverse Recovery Time t 380 570 ns T = +25C, I = 16A, rr J F di/dt = 100A/ s, Note 4 Reverse Recovery Charge Q 4.7 7.1 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible (turnon is dominated by L +L ) on S D Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 4. Pulse width 300 s duty cycle 2%.