Product Information

NTE2923

NTE2923 electronic component of NTE

Datasheet
Transistor: N-MOSFET; 500V; 8.8A; TO247

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 17.2029 ea
Line Total: USD 34.41

1 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2
Multiples : 1
2 : USD 14.5887
5 : USD 13.2625
25 : USD 10.45
50 : USD 10.2875
100 : USD 10.1375
250 : USD 9.2625
500 : USD 9.1125
1000 : USD 8.9875

     
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
LoadingGif

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NTE2923 MOSFET NCh, Enhancement Mode High Speed Switch TO247 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole G Fast Switching Ease of Paralleling S Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (V = 10V), I GS D T = +25 C ................................................................. 8.8A C T = +100 C ................................................................ 5.6A C Pulsed Drain Current (Note 1), I ................................................... 35A DM Power Dissipation (T = +25 C), P ................................................ 150W C D Derate Linearly Above 25 C ............................................... 1.2W/ C GatetoSource Voltage, V ....................................................... 20 GS Single Pulse Avalanche Energy (Note 2), E ....................................... 480mJ AS Avalanche Current (Note 1), I ..................................................... 8.8A AR Repetitive Avalanche Energy (Note 1), E .......................................... 15mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 3.5V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 1.6mm from case for 10sec), T ................. +300 C L Mounting Torque (6 32 or M3 Screw) .................................... 10 lbf in (1.1N m) Thermal Resistance, Junction toCase, R .................................... 0.83 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Typical Thermal Resistance, Case toSink (Flat, Greased Surface), R ........... 0.24 C/W thCS Note 1. Repetitive rating pulse width limited by maximum junction temperature. Note 2. V = 50V, starting T = +25 C, L = 11mH, R = 25 , I = 8.8A DD J G AS Note 3. I 8.8A, di/dt 100A/ s, V 500V, T +150 C SD DD J Rev. 1013Note 4. Pules Width 300 s, Duty Cycle 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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