NTE2949 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Ultra Low Gate Charge Periodic Avalanche Rated G Extreme dv/dt Rated High Peak Current Capability S Improved Transconductance Absolute Maximum Ratings: Continuous Drain Current, I D T = +25C ................................................................ 20.7A C T = +100C ............................................................... 13.1A C Pulsed Drain Current (t limited by T max), I ..................................... 62.1A p J Dpuls Single Pulse Avalanche Energy (I = 10A, V = 50V), E ........................... 690mJ D DD AS Repetitive Avalanche Energy (t limited by T max, I = 10A, V = 50V, Not 2), E ....... 1mJ AR J D DD AR Repetitive Avalanche Current (t limited by T max), I ................................ 20A AR J AR GateSource Voltage, V GS Static ...................................................................... 20V AC (f > 1Hz) ................................................................ 30V Total Power Dissipation (T = +25C), P ........................................... 34.5W C tot Reverse Diode dv/dt (Note 3), dv/dt ................................................ 15V/ns DrainSource Voltage Slope (V = 480V, I = 20.7A, T = +125C), dv/dt .............. 50V/ns DS D J Junction Temperature Range, T ........................................... 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Lead Temperature (wavesoldering, .063 1 .6mm from case, 10sec), T .............. +260 C sold Thermal Resistance, Junction toCase, R ...................................... 3.6K/W thJC Thermal Resistance, Junction toAmbient, R .................................... 80K/W thJA Note 1. Limited only by maximum temperature. Note 2. Repetitive avalanche causes additional power losses that can be calculated as P = E + f. AV AR Note 3. I I , di/dt 400A/ s, V = 400V, V < V , T < T , identical lowside and SD D DClink peak (BR)DSS J Jmax highside switch.Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 0.25mA 600 V (BR)DSS GS D GateSource Avalanche Breakdown Voltage V V = 0V, I = 20A 700 V (BR)DS GS D Gate Threshold Voltage V I = 1000 A, V = V 2.1 3.0 3.9 V GS(th) D GS DS Zero Gate Voltage Drain Current I V = 600V, V = 0, T = +25C 0.1 1.0 A DSS DS GS J V = 600V, V = 0, T = +100C 100 A DS GS J GateSource Leakage Current I 100 nA V = 30V, V = 0V GSS GS DS DrainSource ONState Resistance R V = 10V, I = 13.1A, T = +25C 0.16 0.19 DS(on) GS D J V = 10V, I = 13.1A, T = +150C 0.43 W GS D J Gate Input Resistance R f = 1MHz, Open Drain 0.54 W G Transconductance g V 2 * I * R max I = 13.1A 17.5 S fs DS D DS(on) , D Input Capacitance C V = 0V, V = 25V, f = 1MHz 2400 pF iss GS DS Output Capacitance C 780 pF oss Reverse Transfer Capacitance C 50 pF rss Effective Output Capacitance, Energy Related C V = 0V, V = 0 to 480V, Note 4 83 pF o(er) GS DS V = 0V, V = 0 to 480V, Note 5 100 pF Effective Output Capacitance, Time Related C GS DS o(tr) TurnOn Delay Time t V = 380V V = 0 to 13V, I = 20.7A 10 ns d(on) DD , GS D Rise Time t 5 ns r TurnOff Delay Time t 67 100 ns d(off) Fall Time t 4.5 12 ns f GateSource Charge Q V = 480V, I = 20.7A 11 nC gs DD D GateDrain Charge Q 33 nC gd Gate Charge Total Q V = 480V, I = 20.7A, V = 0 to 10V 87 114 nC g DD D GS Gate Plateau Voltage V V = 480V, I = 20.7A 5.5 V (plateau) DD D Inverse Diode Continuous Forward Current I 20.7 A T = 25C S C Inverse Diode Direct Current Pulsed I 62.1 A T = 25C SM C Inverse Diode Forward Voltage V V = 0V, I = I 1.0 1.2 V SD GS F S Reverse Recovery Time t V = 480V, I = I , di /dt = 100A/ s 500 800 ns rr R F S F Reverse Recovery Charge Q 11 C rr Peak Reverse Recovery Current I 70 A rrm Peak Rate of Fall of Reverse Recovery Current di /dt T = +25C 1400 A/ s rr J Note 4. C is a fixed capacitance that gives the same stored energy as C while V is rising o(er) oss DS from 0 to 80% V . DSS Note 5. C is a fixed capacitance that gives the same charging time as C while V is rising o(er) oss DS from 0 to 80% V . DSS