NTE2948 NTE

NTE2948 MOSFET NChannel, Enhancement Mode High Speed Switch D TO251 Type Package Features: Low Drain Source ON Resistance: R = 4 (Typ) DS(ON) G High Forward Transfer Admittance: y = 0.6S (Typ) fs Low Leakage Current: I = 100A (Max) (V = 400V) DSS DS S Enhancement Model: V = 2 to 4V (V = 10V, I = 1mA) th DS D Applications: DCDC Converter Relay Drive Motor Drive Absolute Maximum Ratings: (T = +25C unless otherwise specified) A DrainSource Voltage, V ........................................................ 400V DSS DrainGate Voltage (R = 20k), V ............................................. 400V GS DGR GateSource Voltage, V ......................................................... 30V GS Drain Current (Note 1), I D DC .......................................................................... 1A Pulsed ....................................................................... 3A Drain Power Dissipation (T = +25C), P ............................................ 20W C D Single Pulsed Avalanche Energy (Note 2), E ...................................... 113mJ AS Avalanche Current, I ............................................................... 1A AR Repetitive Avalanche Energy (Note 3), E ............................................ 2mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Maximum Thermal Resistance: ChanneltoCase, R ................................................ 6.25 C/W thCHC ChanneltoAmbient, R ............................................. 125 C/W thCHA Note 1. Please use devices on condition that the channel temperature is below +150 C. Note 2. V = 90V, T = +25C (initial), L = 183mH, R = 25. DD ch G Note 3. Repetitive rating: pulse width limited by maximum channel temperature.Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit GateSource Leakage Current I V = 25V, V = 0V 10 A GSS GS DS GateSource Breakdown Voltage BV I = 10A, V = 0V 30 V GSS G DS Drain Cutoff Current I V = 400V, V = 0 100 A DSS DS GS DrainSource Breakdown Voltage BV I = 10mA, V = 0V 480 V DSS D GS Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V GS(th) DS D DrainSource ON Resistance R V = 10V, I = 0.5A 4.2 5.5 DS(on) GS D Forward Transfer Admittance y V = 10V, I = 0.5A 0.3 0.6 S fs DS D Input Capacitance C V = 0V, V = 10V, f = 1MHz 145 pF iss GS DS Output Capacitance C 80 pF oss Reverse Transfer Capacitance C 35 pF rss TurnOn Delay Time t 56 ns V = 200V V = 10V, I = 0.5A, d(on) DD , GS D R = 400, Duty 1%, t = 10s L w Rise Time t 14 ns r TurnOff Delay Time t 75 ns d(off) Fall Time t 26 ns f Total Gate Charge Q V = 10V, I = 1A, V = 320V 5.7 nC g GS D DD GateSource Charge Q 3.0 nC gs GateDrain (Miller) Charge Q 2.7 nC gd SourceDrain Diode Ratings and Characteristics Continuous Drain Reverse Current I Note 1 1 A DR Pulse Drain Reverse Current I Note 1 3 A DRP Diode Forward Voltage V I = 1A, V = 0V 1.7 V SDF DR GS Reverse Recovery Time t I = 1A, V = 0V, dI /dt = 100A/s 650 ns rr DR GS DR Reverse Recovery Charge Q 14.6 C rr Note 1. Please use devices on condition that the channel temperature is below +150 C.