NTE2959 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Applications: SMPS DCDC Converter Battery Charger Power Supply of Printer G Copier HDD, FDD, TV, VCR S Personal Computer Absolute Maximum Ratings: (T = +25C unless otherwise specified) C DrainSource Voltage (V = 0V), V .............................................. 900V GS DSS GateSource Voltage (V = 0V), V ............................................... 30V DS GS Drain Current, I D Continuous ................................................................... 5A Pulsed ...................................................................... 15A Maximum Power Dissipation, P .................................................... 30W D Channel Temperature Range, T .......................................... 55 to +150C ch Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Channel toCase, R .................................. 4.17 C/W th(chc) Isolation Voltage, V ............................................................ 2000V ISO Electrical Characteristics: (T = +25C unless otherwise specified) ch Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 1mA 900 V (BR)DSS DS D GateSource Breakdown Voltage V V = 0V, I = 100A 30 V (BR)GSS DS G GateSource Leakage I V = 25V, V = 0V 10 A GSS GS DS Zero Gate Voltage Drain Current I V = 900V, V = 0 1.0 mA DSS DS GS Gate Threshold Voltage V V = 10V, I = 1mA 2.0 3.0 4.0 V GS(th) DS D Static DrainSource ON Resistance R V = 10V, I = 2A 2.15 2.80 DS(on) GS D DrainSource OnState Voltage V V = 10V, I = 2A 4.3 5.6 V DS(on) GS D Forward Transfer Admittance y V = 10V, I = 2A 3.0 5.0 S fs GS D Rev. 1013Electrical Characteristics (Contd): (T = +25C unless otherwise specified) ch Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C V = 0V, V = 25V, f = 1MHz 1050 pF iss GS DS Output Capacitance C 100 pF oss Reverse Transfer Capacitance C 20 pF rss TurnOn Delay Time t 20 ns V = 200V I = 2A, V = 10V, d(on) DD , D GS R = R = 50 GEN GS Rise Time t 18 ns r TurnOff Delay Time t 110 ns d(off) Fall Time t 35 ns f Diode Forward Voltage V I = 2A, V = 0V 1.0 1.5 V SD S GS .126 (3.2) Dia Max .181 (4.6) Max .405 (10.3) .114 (2.9) Max Isol .252 (6.4) .622 (15.0) Max GD S .118 (3.0) Max .531 (13.5) Min .098 (2.5) .100 (2.54)