NTE2976 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Full Pack Type Package Features: D Low Input Capacitance Low Static R DS(on) Fast Switching Time Guaranteed Avalanche Resistance G Applications: S Switching Power Supply of AC 240V Input High Voltage Power Supply Inverter Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 700V DSS GateSource Voltage, V ........................................................ 30V GSS Drain Current, I D Continuous DC ............................................................... 6A Peak (Pulse Width 10 s, Duty Cycle 1/100) .................................. 18A Continuous DC Source Current, I ..................................................... 6A S Total Power Dissipation, P ......................................................... 50W T Repetitive Avalanche Current (T = +150 C), I ....................................... 6A ch AR Single Avalanche Energy (T = +25 C), E ........................................ 190mJ ch AS Repetitive Avalanche Energy (T = +25 C), E ..................................... 19mJ ch AR Operating Channel Temperature, T ............................................... +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R ..................................... 2.5 C/W thJC Dielectric Strength (Terminals toCase, AC, 1 minute), V ............................. 2kV dis Mounting Torque, TOR Maximum ............................................................... 0.5N m Recommended .......................................................... 0.3N m Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V I = 1mA, V = 0V 700 V (BR)DSS D GS Zero Gate Voltage Drain Current I V = 700V, V = 0V 250 A DSS DS GS GateSource Leakage Current I V = 30V, V = 0V 0.1 A GSS GS DS Forward Transconductance g I = 3A, V = 10V 3 5 S fs D DS Static DrainSource OnState Resistance R I = 3A, V = 10V 1.5 2.0 DS(on) D GS Gate Threshold Voltage V I = 1mA, V = 10V 2.5 3.0 3.5 V TH D DS SourceDrain Diode Forward Voltage V I = 3A, V = 0V 1.5 V SD S GS Total Gate Charge Q V = 400V, V = 10V, I = 6A 35 nC g DD GS D Input Capacitance C V = 10V, V = 0V, f = 1MHz 1250 pF iss DS GS Reverse Transfer Capacitance C 250 pF rss Output Capacitance C 530 pF oss TurnOn Time t I = 3A, R = 50 , V = 10V 60 110 ns on D L GS TurnOff Time t 160 250 ns off .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max GD S .531 (13.5) Min .100 (2.54) .059 (1.5) Max