NTE2975 NTE

NTE2975 MOSFET NChannel, Enhancement Mode High Speed Switch TO220 Type Package Features: Advanced Process Technology D Ultra Low On State Resistance Dynamic dv/dt Rating +175 C Operating Temperature Fast Switching Fully Avalanche Rated G Absolute Maximum Ratings: S Drain Current, I D Continuous (V = 10V) GS T = +25 C (Note 1) ....................................................... 53A C T = +100 C .............................................................. 37A C Pulse (Note 2) .............................................................. 180A Power Dissipation (T = +25 C), P ................................................ 107W C D Derate above +25 C ..................................................... 0.71W/ C GateSource Voltage, V ......................................................... 20V GS Avalanche Current (Note 2), I ...................................................... 28A AR Repetitive Avalanche Energy (Note 2), E ........................................... 11mJ AR Single Pulse Avalanche Energy (Note 3, Note 4), E ................................ 152mJ AS Peak Diode Recovery (Note 5), dv/dt .............................................. 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +175 C J Storage Temperature Range, T .......................................... 55 to +175 C stg Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T ............... +300 C L Maximum Thermal Resistance, Junction toCase, R ............................ 1.4 C/W thJC Typical Thermal Resistance, Case toSink (Flat, greased surface), R ............. 0.5 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 62 C/W thJA Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 3. Starting T = +25 C, L = 389 H, R = 25 , I = 28A. J G AS Note 4. This is a calculated value limited to T = +175 C. J Note 5. I 28A, di/dt 220A/ s, V V , T +175 C SD DD (BR)DSS J Rev. 714Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 250 A 55 V (BR)DSS GS D V Breakdown Voltage Temperature Reference to +25 C, I = 1mA 0.057 V/ C (BR)DSS D Coefficient T J Static DrainSource OnResistance R V = 10V, I = 28A, Note 6 16 DS(on) GS D Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D Forward Transconductance g V = 25V, I = 28A, Note 6 19 S fs DS D DrainSource Leakage Current I V = 55V, V = 0 25 A DSS DS GS V = 44V, V = 0, T = +150 C 250 A DS GS J GateSource Forward Leakage Current I V = 20V 100 nA GSS GS V = 20V 100 nA GS Total Gate Charge Q 72 nC V = 10V, I = 28A, V = 44V G GS D DS GateSource Charge Q 11 nC GS GateDrain (Miller) Charge Q 26 nC GD TurnOn Delay Time t 14 ns V = 10V, V = 28V, I = 28A, d(on) GS DD D R = 12 G Rise Time t 76 ns r TurnOff Delay Time t 52 ns d(off) Fall Time t 57 ns f Internal Drain Inductance L 4.5 nH Between lead, .250 (6mm) from D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C V = 25V, V = 0, f = 1MHz 1696 pF iss DS GS Output Capacitance C 407 pF oss Reverse Transfer Capacitance C 110 pF rss SourceDrain Ratings and Characteristics Continuous Source Current (Body Diode) I 53 A S Pulsed Source Current (Body Diode) I Note 2 180 A SM Diode Forward Voltage V T = +25 C, I = 28A, V = 0, 1.3 V F(SD) J S GS Note 6 Reverse Recovery Time t 67 101 ns T = +25 C, I = 28A, rr J F di/dt = 100A/ s, Note 6 Reverse Recovery Charge Q 208 312 nC rr Forward TurnOn Time t Intristic turnon time is negligible on (turnon is dominated by L + L ) S D Note 2. Repetitive rating pulse width limited by maximum junction temperature. Note 6. Pulse width 400 s, duty cycle 2%.