NTE297 NTE

NTE297 electronic component of NTE
NTE297 NTE
NTE297 Bipolar Transistors - BJT
NTE297  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTE297 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE297 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NTE297
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 80V 1A 3-Pin TO-92
Datasheet: NTE297 Datasheet (PDF)
Price (USD)
21: USD 3.5475 ea
Line Total: USD 74.5 
Availability : 0
  
QtyUnit Price
21$ 3.5475
25$ 2.6875
100$ 2.2875
250$ 2.1375
500$ 2.0125
1000$ 1.925
2500$ 1.8875
5000$ 1.825

Availability 0
Ship by Thu. 04 Sep to Wed. 10 Sep
MOQ : 21
Multiples : 1
QtyUnit Price
21$ 3.5475
25$ 2.6875
100$ 2.2875
250$ 2.1375
500$ 2.0125
1000$ 1.925
2500$ 1.8875
5000$ 1.825


Availability 0
Ship by Tue. 02 Sep to Thu. 04 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.996
3$ 2.688
9$ 2.352
23$ 2.226
25$ 2.142

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE297 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE297 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE297 (NPN) & NTE298 (PNP) Silicon Complementary Transistors Audio Amplifier, Driver Giant TO92 Type Package Features: High Collector Emitter Voltage Ideal for 25 30W Low Frequency Output Drive Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A Collector Base Voltage, V ....................................................... 80V CBO CollectorEmitter Voltage, V ...................................................... 80V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous ................................................................. 0.5A Peak ........................................................................ 1A Collector Power Dissipation, P ...................................................... 1W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E CollectorBase Voltage V I = 10 A, I = 0 80 V CBO C E CollectorEmitter Voltage V I = 100 A, I = 0 80 V CEO C B EmitterBase Voltage V I = 10 A, I = 0 5 V EBO E C DC Current Gain h V = 10V, I = 150mA, Note 2 130 330 FE CE C V = 5V, I = 500mA, Note 2 50 100 CE C CollectorEmitter Saturation Voltage V I = 300mA, I = 30mA, Note 2 0.2 0.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 300mA, I = 30mA, Note 2 0.85 1.2 V BE(sat) C B Transition Frequency f V = 10V, I = 50mA, f = 100MHz 120 MHz T CB E Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 11 20 pF ob CB E Note 1. NTE297MP is a matched pair of NTE297 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse Measurement Rev. 414.339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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