NTE2969 NTE

NTE2969 MOSFET NChannel, Enhancement Mode High Speed Switch TO3P Type Package Description: The NTE2969 is an Nchannel enhancement mode power field effect transistor in a TO3P type pack- age especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for use in applications such as a high efficiency switch mode power supply or an electronic lamp ballast on half bridge. D Features: 30A, 400V, R = 0.14 V = 10V DS(on) GS Low gate Charge (90nC Typ) Low C (60pF Typ) rss Fast Switching G 100% Avalanche Tested Improved dv/dt Capability S Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage, V ........................................................ 400V DSS Drain Current, I D Continuous T = +25 C ............................................................... 30A C T = +100 C .............................................................. 19A C Pulsed (Note 1) ............................................................. 120A GateSource Voltage, V ......................................................... 30V GS Gate Current (Pulsed), I ........................................................ 1.5A GM Single Pulsed Avalanche Energy (Note 2), E ..................................... 1400mJ AS Avalanche Current (Note 1), I ...................................................... 30A AS Repetitive Avalanche Energy (Note 1), E .......................................... 29mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 4.5V/ns Total Power Dissipation (T = +25 C), P ........................................... 290W C D Derate Above 25 C ...................................................... 2.33W/ C Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance: Maximum JunctiontoCase, R ........................................ 0.43 C/W thJC Typical CasetoSink, R .............................................. 0.24 C/W thCS Maximum Junction toAmbient, R ...................................... 40 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 2.7mH, I = 30A, V = 50V, R = 27 , Starting T = +25 C. AS DD G J Note 3. I 30A, di/dt 200A/ s, V BV , Starting T = +25 C. SD DD DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage BV V = 0V, I = 250 A 400 V DSS GS D BV/ T 0.4 V/ C Breakdown Voltage Temperature I = 250 A, Referenced to +25 C J D Coefficient Zero Gate Voltage Drain Current I V = 400V, V = 0 1 A DSS DS GS V = 320V, T = +125 C 10 A DS C GateSource Leakage Forward I V = 30V, V = 0V 100 nA GSSF GS DS GateSource Leakage Reverse I V = 30V, V = 0V 100 nA GSSR GS DS ON Characteristics Gate Threshold Voltage V V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D Static DrainSource ON Resistance R V = 10V, I = 12.5A 0.107 0.14 DS(on) GS D Forward Transconductance g V = 50V, I = 15A, Note 4 20 mhos fs DS D Dynamic Characteristics Input Capacitance C V = 0V, V = 25V, f = 1MHz 3400 4400 pF iss GS DS Output Capacitance C 580 750 pF oss Reverse Transfer Capacitance C 60 80 pF rss Switching Characteristics TurnOn Delay Time t 80 170 ns V = 200V I = 30A, R = 25 , d(on) DD , D G Note 4, Note 5 Rise Time t 320 650 ns r TurnOff Delay Time t 190 390 ns d(off) Fall Time t 170 350 ns f Total Gate Charge Q 90 120 nC V = 10V, I = 30A, V = 320V, g GS D DS Note 4, Note 5 GateSource Charge Q 22 nC gs GateDrain (Miller) Charge Q 46 nC gd SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 30 A S Pulse Source Current I (Body Diode) 120 A SM Diode Forward Voltage V I = 30A, V = 0V 1.5 V SD S GS Reverse Recovery Time t 370 ns V = 0V, I = 30A, dI /dt = 100A/ s, rr GS S F Note 4 Reverse Recovery Charge Q 3.9 C rr Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Note 5. Essentially independent of operating temperature.