NTE2973 MOSFET NChannel, Enhancement Mode High Speed Switch TO3P Type Package D Applications: SMPS DCDC Converter Battery Charger Power Supply of Printer G Copier HDD, FDD, TV, VCR S Personal Computer Absolute Maximum Ratings: (T = +25 C unless otherwise specified) C DrainSource Voltage (V = 0V), V .............................................. 900V GS DSS GateSource Voltage (V = 0V), V ............................................... 30V DS GS Drain Current, I D Continuous .................................................................. 14A Pulsed ...................................................................... 42A Maximum Power Dissipation, P ................................................... 275W D Channel Temperature Range, T .......................................... 55 to +150 C ch Storage Temperature Range, T .......................................... 55 to +150 C stg Thermal Resistance, Channel toCase, R .................................. 0.45 C/W th(chc) Electrical Characteristics: (T = +25 C unless otherwise specified) ch Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage V V = 0V, I = 1mA 900 V (BR)DSS DS D GateSource Breakdown Voltage V V = 0V, I = 100 A 30 V (BR)GSS DS G GateSource Leakage I V = 25V, V = 0V 10 A GSS GS DS Zero Gate Voltage Drain Current I V = 900V, V = 0 1.0 mA DSS DS GS Gate Threshold Voltage V V = 10V, I = 1mA 2.0 3.0 4.0 V GS(th) DS D Static DrainSource ON Resistance R V = 10V, I = 7A 0.63 0.85 DS(on) GS D DrainSource OnState Voltage V V = 10V, I = 7A 4.41 5.95 V DS(on) GS D Forward Transfer Admittance y V = 10V, I = 7A 9 15 S fs GS D Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) ch Parameter Symbol Test Conditions Min Typ Max Unit Input Capacitance C V = 0V, V = 25V, f = 1MHz 2900 pF iss GS DS Output Capacitance C 290 pF oss Reverse Transfer Capacitance C 50 pF rss TurnOn Delay Time t 45 ns V = 200V I = 7A, V = 10V, d(on) DD , D GS R = R = 50 GEN GS Rise Time t 65 ns r TurnOff Delay Time t 325 ns d(off) Fall Time t 100 ns f Diode Forward Voltage V I = 7A, V = 0V 1.0 1.5 V SD S GS .190 (4.82) .615 (15.62) .787 (20.0) .591 .126 (3.22) Dia (15.02) .787 (20.0) GD S .215 (5.47)