NTE2981 Logic Level MOSFET NChannel, Enhancement Mode High Speed Switch TO251 Type Package D Features: Dynamic dv/dt Rating Repetitive Avalanche rated Logic Level Gate Drive R (on) Specified at V = 4V & 5V DS GS G TO251 Type Package S Absolute Maximum Ratings: Drain Current, I D Continuous (V = 5V) GS T = +25 C .............................................................. 7.7A C T = +100 C ............................................................. 4.9A C Pulsed (Note 1) .............................................................. 31A Total Power Dissipation (T = +25 C), P ............................................ 42W C D Derate Above 25 C ...................................................... 0.33W/ C Total Power Dissipation (PC Board Mount, T = +25 C, Note 2), P ...................... 2.5W C D Derate Above 25 C ...................................................... 0.02W/ C GateSource Voltage, V ......................................................... 10V GS Single Pulsed Avalanche Energy (Note 3), E ...................................... 210mJ AS Avalanche Current (Note 1), I ..................................................... 7.7A AR Repetitive Avalanche Energy (Note 1), E .......................................... 4.2mJ AR Peak Diode Recovery dv/dt (Note 4), dv/dt .......................................... 5.5V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), T .......... +260 C L Maximum Thermal Resistance: JunctiontoCase, R .................................................. 3.0 C/W thJC Junction toAmbient (PCB Mount, Note 2), R ............................ 50 C/W thJA JunctiontoAmbient, R ............................................... 110 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. When mounted on a 1 square PCB (FR 4 or G10 material). Note 3. L = 5.3mH, V = 25V, R = 25 , Starting T = +25 C, I = 7.7A. DD G J AS Note 4. I 9.2A, di/dt 110A/ s, V V , T +150 C. SD DD (BR)DSS J Rev. 1013Electrical Characteristics: (T = +25 C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit DrainSource Breakdown Voltage BV V = 0V, I = 250 A 100 V DSS GS D Breakdown Voltage Temperature V / Reference to +25 C, I = 1mA 0.13 V/ C (BR)DSS D Coefficient T J Static DrainSource ON Resistance R V = 5V, I = 4.6A, Note 5 0.27 DS(on) GS D V = 4V, I = 3.9A, Note 4 0.38 GS D Gate Threshold Voltage V V = V , I = 250 A 1.0 2.0 V GS(th) DS GS D Forward Transconductance g V = 50V, I = 4.6A, Note 5 4.4 mhos fs DS D DraintoSource Leakage Current I V = 100V, V = 0 25 A DSS DS GS V = 80V, V = 0V, T = +125 C 250 A DS GS C GateSource Leakage Forward I V = 10V 100 nA GSS GS GateSource Leakage Reverse I V = 10V 100 nA GSS GS Total Gate Charge Q V = 5V, I = 9.2A, V = 80V, Note 5 12 nC g GS D DS GateSource Charge Q 3.0 nC gs GateDrain (Miller) Charge Q 7.1 nC gd TurnOn Delay Time t V = 50V I = 9.2A, R = 9.0 , 9.8 ns d(on) DD , D G R = 5.2 , Note 5 D Rise Time t 64 ns r TurnOff Delay Time t 21 ns d(off) Fall Time t 27 ns f Internal Drain Inductance L Between lead, 6mm (0.25) from 4.5 nH D package and center of die contact Internal Source Inductance L 7.5 nH S Input Capacitance C V = 0V, V = 25V, f = 1MHz 490 pF iss GS DS Output Capacitance C 150 pF oss Reverse Transfer Capacitance C 30 pF rss SourceDrain Diode Ratings and Characteristics Continuous Source Current I (Body Diode) 7.7 A S Pulse Source Current I (Body Diode) Note 1 31 A SM Diode Forward Voltage V T = +25 C, I = 7.7A, V = 0V, Note 5 2.5 V SD J S GS Reverse Recovery Time t 110 140 ns T = +25 C, I = 9.2A, di/dt = 100A/ s, rr J F Note 5 Reverse Recovery Charge Q 0.8 1.0 C rr Forward TurnOn Time t Intrinsic turnon time is neglegible on (turnon is dominated by L + L ) S D Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.