Product Information

NTE3301

NTE3301 electronic component of NTE

Datasheet
Transistor: IGBT; 400V; 15A; 40W; TO220FP

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 9.3488 ea
Line Total: USD 93.49

0 - Global Stock
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 10
Multiples : 1
10 : USD 9.3488
50 : USD 6.534
100 : USD 6.0264
200 : USD 5.5944
500 : USD 5.2272

0 - WHS 2


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 11.6831
3 : USD 7.6531
6 : USD 7.2324

     
Manufacturer
Product Category
Power Dissipation
Mounting
Case
Type Of Transistor
Pulsed Collector Current
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
LoadingGif

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NTE3301 Insulated Gate Bipolar Transistor NChannel Enhancement Mode, High Speed Switch TO220 Full Pack Features: High Input Impedance Low Saturation Voltage Enhancement Mode 20V Gate Drive Applications: High Power Switching Motor Control Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A CollectorEmitter Voltage, V ..................................................... 400V CES GateEmitter Voltage, V ........................................................ 25V GES Collector Current, I C DC ......................................................................... 15A Pulse (1ms) ................................................................ 170A Collector Power Dissipation, P C T = +25 C .................................................................. 2W A T = +25 C ................................................................ 40W C Operating Junction Temperature, T .............................................. +150 C J Storage Temperature Range, T ......................................... 55 to +150 C stg Thermal Resistance, Junction toCase, R .................................... 3.12 C/W thJC Screw Torque .................................................................. 0.6N m Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I nA V = 25V, V = 0 100 GES GE CE Collector Cutoff Current I V = 400V, V = 0 1.0 A CES CE GE CollectorEmitter Breakdown Voltage V I = 2mA, V = 0 400 V (BR)CES C GE GateEmitter Cutoff Voltage V I = 1mA, V = 5V 4.0 5.0 7.0 V GE(off) C CE CollectorEmitter Saturation Voltage V I = 170A, V = 20V (Pulsed) 5.0 8.0 V CE(sat) C GE Input Capacitance C V = 10V, V = 0, f = 1MHz 2000 pF ies CE GE Rise Time t 0.1 0.5 s V = 300V r CC TurnOn Time t 0.15 0.50 s on Fall Time t 4.0 6.0 s f TurnOff Time t 4.5 7.0 s off Rev. 814C G E .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .114 (2.9) Max .122 (3.1) Dia .295 (7.5) .165 .669 (4.2) (17.0) Max GC E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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