Product Information

NTE3322

NTE3322 electronic component of NTE

Datasheet
Transistor: IGBT; 900V; 60A; 170W; TO3P
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 32.942 ea
Line Total: USD 32.94

7 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 33.761
2 : USD 31.928
3 : USD 31.915

Read More Specifications

     
Manufacturer
Product Category
Power Dissipation
Mounting
Case
Type Of Transistor
Pulsed Collector Current
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

ElectronicsThe NTE3322 from NTE Electronics is an Insulated Gate Bipolar Transistor (IGBT) with a voltage rating of 900V, current rating of 60A, power rating of 170W, and a TO3P package type. This IGBT is designed to provide superior performance for high frequency applications and substrate temperature operation. It also comes with all the necessary components for easy installation and use. The NTE3322 offers superior on-state characteristics, higher efficiency, and faster switching times over traditional bipolar transistors.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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