Product Information

NTE333

NTE333 electronic component of NTE

Datasheet
Transistor: NPN; bipolar; RF; 18V; 15A; 175W; W52K; Pout:60W
Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 144.3263 ea
Line Total: USD 144.33

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

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NTE333
NTE

1 : USD 144.3263
10 : USD 117.5796
25 : USD 109.7496
50 : USD 102.8916

0 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

NTE333
NTE

1 : USD 152.3553

Read More Specifications

     
Manufacturer
Product Category
Kind Of Transistor
Mounting
Case
Polarisation
Type Of Transistor
Output Power
Collector-Emitter Voltage
Collector Current
Power Dissipation
Frequency
Current Gain
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Additional Infomation About Product

NTE333 & NTE334 Silicon NPN Transistors RF Power Output Description: The NTE333 & NTE334 are designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: Specified 12.5 Volt, 30MHz Characteristics Output Power = 60 Watts Minimum Gain = 13dB Efficiency = 55% Absolute Maximum Ratings: Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V CEO Collector Emitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V CES EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V EBO Collector Current Continuous, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A C Total Device Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, Junction toCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W thJC Note 1. NTE334 is a discontinued device and no longer available. Electrical Characteristics: (T = +25C unless otherwise specified). C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 100mA, I = 0 18 V (BR)CEO C B CollectorEmitter Breakdown Voltage V I = 50mA, V = 0 36 V (BR)CES C BE EmitterBase Breakdown Voltage V I = 10mA, I = 0 4.0 V (BR)EBO E C ON Characteristics DC Current Gain h I = 5.0A, V = 5.0V 10 150 FE C CE Dynamic Characteristics Output Capacitance C V = 12.5Vdc, I = 0, f = 1.0MHz 250 pF ob CB E CommonEmitter Amplifier Power Gain G V = 12.5Vdc, P = 60W, f = 30MHz 13 dB pe CC out Collector Efficiency V = 12.5Vdc, P = 60W, f = 30MHz 55 % CC out Series Equivalent Input Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.6 Ohms in CC out j.844 Series Equivalent Output Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.7 Ohms out CC out j.188Electrical Characteristics (Contd): (T = +25C unless otherwise specified). C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics (Contd) Parallel Equivalent Input Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 2.09/ /pF in CC out 1030 Parallel Equivalent Output Impedance Z V = 12.5Vdc, P = 60W, f = 30MHz 1.75/ /pF out CC out 330 NTE333 .122 (3.1) .725 (18.42) Dia (2 Holes) EC .250 (6.35) BE .225 (5.72) .860 (21.84) .378 (9.56) .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) NTE334 1.040 (26.4) Max .520 (13.2) C .230 (5.84) EE B .385 (9.8) .100 (2.54) .005 (0.15) Dia .168 (4.27) .750 (19.05) 8 32 NC 3A Wrench Flat

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NTE may also be referenced as

NTE ELECTRONICS
NTE ELECTRONICS, INC.

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