BF1107,215 NXP

BF1107,215 electronic component of NXP
BF1107,215 NXP
BF1107,215 RF MOSFET Transistors
BF1107,215  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BF1107,215 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF1107,215 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

Part No. BF1107,215
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Transistors RF MOSFET N-Channel 3V 10mA
Datasheet: BF1107,215 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5489
10$ 0.456
100$ 0.2945
1000$ 0.2356
3000$ 0.235
9000$ 0.235
24000$ 0.2266
45000$ 0.2229
99000$ 0.2182
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Height
Length
Type
Width
Number Of Channels
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF1107,215 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF1107,215 and other electronic components in the RF MOSFET Transistors category and beyond.

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BF1107 N-channel single gate MOSFET Rev. 04 9 January 2007 Product data sheet 1. Product prole 1.1 General description The BF1107 is a depletion type eld-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Currentless RF switch 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit L on-state insertion loss V =V =0V ins(on) SG DG f = 50 MHz to 860 MHz R =R =50 - - 2.5 dB S L R =R =75 - - 3.5 dB S L ISL off-state isolation V =V =5V off SG DG f = 50 MHz to 860 MHz R =R =50 30 --dB S L R =R =75 30 --dB S L R drain-source on-state V =0V I = 1 mA - 12 20 DSon GS D resistance V gate-source pinch-off V =1V I =20 A- - 3 - 4.5 V GS(p) DS D voltageBF1107 NXP Semiconductors N-channel single gate MOSFET 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 1 drain 3 1 1 2 source 3 gate 3 2 12 sym120 1 Drain and source are interchangeable 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1107 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code BF1107 S3p 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 3 V DS V source-drain voltage - 3 V SD V drain-gate voltage - 7 V DG V source-gate voltage - 7 V SG I drain current - 10 mA D T storage temperature - 65 +150 C stg T junction temperature - 150 C j BF1107 4 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 9 January 2007 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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