Product Information

BF861A,215

BF861A,215 electronic component of NXP

Datasheet
Transistors RF JFET TAPE7 FET-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.2839
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.5759
10 : USD 0.4754
100 : USD 0.3063
1000 : USD 0.2453
3000 : USD 0.2353
9000 : USD 0.2353
24000 : USD 0.2265
45000 : USD 0.2221
99000 : USD 0.2177
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Factory Pack Quantity :
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BF861A BF861B BF861C N-channel junction FETs Rev. 5 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. MSC895 1.2 Features and benefits High transfer admittance Low input capacitance Low feedback capacitance Low noise. 1.3 Applications Preamplifiers for AM tuners in car radios. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage -- 25 V DS (DC) I drain current DSS BF861A V =0V V =8V 2 - 6.5 mA GS DS BF861B V =0V V =8V 6 - 15 mA GS DS BF861C V =0V V =8V 12 - 25 mA GS DS P total power dissipation up to T =25 C- - 250 mW tot amb y forward transfer fs admittance BF861A V =0V V =8V 12 - 20 mS GS DS BF861B V =0V V =8V 16 - 25 mS GS DS BF861C V =0V V =8V 20 - 30 mS GS DS C input capacitance f = 1 MHz - - 10 pF iss C reverse transfer f=1MHz - - 2.7 pF rss capacitance SOT23BF861A BF861B BF861C NXP Semiconductors N-channel junction FETs 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1source 1 3 2drain 3 2 sym053 3gate 12 3. Ordering information Table 3. Ordering information Type Package number Name Description Version BF861A - plastic surface mounted package 3 leads SOT23 BF861B - plastic surface mounted package 3 leads SOT23 BF861C - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code BF861A 28* BF861B 29* BF861C 30* 1 * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 25 V DS V gate-source voltage open drain - 25 V GSO V drain-gate voltage (DC) open source - 25 V DGO I forward gate current (DC) - 10 mA G 1 P total power dissipation up to T =25 C -250 mW tot amb T storage temperature 65 +150 C stg T operating junction -150 C j temperature 1 Device mounted on an FR4 printed-circuit board. BF861A BF861B BF861C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 15 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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