BF862.215 NXP

BF862.215 electronic component of NXP
BF862.215 NXP
BF862.215 RF JFET Transistors
BF862.215  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of BF862.215 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. BF862.215 RF JFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

Part No. BF862.215
Manufacturer: NXP
Category: RF JFET Transistors
Description: Transistor: N-JFET; unipolar; 20V; 25mA; 300mW; SOT23
Datasheet:
Price (USD)
1: USD 0.4209 ea
Line Total: USD 0.42 
Availability : 0
  
QtyUnit Price
1$ 0.4209
10$ 0.2245
130$ 0.2108

Availability 0
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4209
10$ 0.2245
130$ 0.2108

   
Manufacturer
Product Category
Transistor Type
Vds - Drain-Source Breakdown Voltage
Pd - Power Dissipation
Polarisation
Drain Current
Case
Mounting
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF862.215 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF862.215 and other electronic components in the RF JFET Transistors category and beyond.

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Semiconductors catalog BF862.215 is a Dual N-Channel Enhancement Mode Field Effect Transistor, manufactured by NXP Semiconductors. It is an ideal device for applications that require high switching performance, low noise and low capacitance such as RF power amplifiers, multi-band amplifiers, taps and general purpose switching applications. The transistor is available in the TO-72 style surface-mount package. The device has a low gate-source capacitance of <100pF and has an integrated shunt resistor to protect the gate against too large gate voltages. The on-state drain current is specified up to 8A, while the maximum drain/source voltage is 45V. This device is also RoHS compliant, making it suitable for use in a wide range of environments.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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