BFG31,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification 1995 Sep 12 Supersedes data of November 1992NXP Semiconductors Product specification PNP 5 GHz wideband transistor BFG31 FEATURES PINNING lfpage High output voltage capability 4 PIN DESCRIPTION High gain bandwidth product 1emitter Good thermal stability 2base Gold metallization ensures 3emitter excellent reliability. 4 collector DESCRIPTION PNP planar epitaxial transistor 123 mounted in a plastic SOT223 MSB002 - 1 Top view envelope. Fig.1 SOT223. It is intended for wideband amplifier applications. NPN complement is the BFG97. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base 15 V CEO I DC collector current 100 mA C P total power dissipation up to T = 135 C note 1 1W tot s h DC current gain I = 70 mA V = 10 V 25 FE C CE T =25 C amb f transition frequency I = 70 mA V = 10 V 5.0 GHz T C CE f= 500MHz T = 25 C amb G maximum unilateral power I = 70 mA V = 10 V 12 dB UM C CE gain f= 800MHz T =25 C amb V output voltage I = 100 mA V = 10 V 600 mV o C CE R =75 T = 25 C L amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 3V EBO I DC collector current 100 mA C P total power dissipation up to T =135 C note 1 1W tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s 1995 Sep 12 2