Product Information

BFG590,215

BFG590,215 electronic component of NXP

Datasheet
Trans RF BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-143B T/R
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

24: USD 1.3795 ea
Line Total: USD 33.11

0 - Global Stock
MOQ: 24  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Operating Frequency
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
Packaging
Collector Current Dc Max
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain Min
Operating Temperature Classification
Category
Rad Hardened
Dc Current Gain
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Additional Infomation About Product

BFG590; BFG590/X NPN 5 GHz wideband transistors Rev. 04 12 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistors BFG590; BFG590/X FEATURES PINNING High power gain DESCRIPTION PIN Low noise figure BFG590 BFG590/X High transition frequency 1 collector collector Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range Ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive. handbook, 2 columns4 3 DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. 12 Top view MSB014 MARKING TYPE NUMBER CODE BFG590 %MH Fig.1 Simplified outline SOT143B. BFG590/X %MN QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO I collector current (DC) -- 200 mA C P total power dissipation T 60 C -- 400 mW tot s h DC current gain I = 35 mA; V=8V 5090280 FE C CE C feedback capacitance I = 0; V =8V; f=1MHz - 0.7 - pF re C CE f transition frequency I = 80 mA; V =4V; f=1GHz - 5 - GHz T C CE G maximum unilateral power gain I = 80 mA; V =4V; - 13 - dB UM C CE f = 900 MHz; T =25 C amb 2 |S | insertion power gain I = 80 mA; V =4V; - 11 - dB 21 C CE f = 900 MHz; T =25 C amb Rev. 04 - 12 November 2007 2 of 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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