BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
Rev. 05 23 November 2007 Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
shown below.
NXP Semiconductors Product specication
NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR
FEATURES PINNING
High power gain
DESCRIPTION
PIN
Low noise figure
BFG67 BFG67/X BFG67/XR
High transition frequency
1 collector collector collector
Gold metallization ensures
2 base emitter emitter
excellent reliability.
3 emitter base base
4 emitter emitter emitter
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
handbook, 2 columns4 3 handbook, 2 columns3 4
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
2 1
12
reverse pinning (BFG67/XR) also
available on request.
Top view MSB014
Top view MSB035
MARKING
TYPE NUMBER CODE
BFG67 (Fig.1) V3%
Fig.1 Simplified outline Fig.2 Simplified outline
BFG67/X (Fig.1) %MV
SOT143B. SOT143R.
BFG67/XR (Fig.2) V26
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V collector-emitter voltage open base - 10 V
CEO
I collector current (DC) - 50 mA
C
P total power dissipation T 65 C - 300 mW
tot s
C feedback capacitance I =i = 0; V = 8 V; f = 1 MHz 0.5 - pF
re C c CB
f transition frequency I = 15 mA; V = 8 V; f = 500 MHz 8 - GHz
T C CE
G maximum unilateral power I = 15 mA; V =8V; 17 - dB
UM C CE
gain T =25 C; f = 1 GHz
amb
F noise gure = ; I = 5 mA; V =8V; 1.3 - dB
s opt C CE
T =25 C; f = 1 GHz
amb
= ; I = 5 mA; V =8V; 2.2 - dB
s opt C CE
T =25 C; f = 2 GHz
amb
Rev. 05 - 23 November 2007 2 of 14