BFQ149,115 NXP

BFQ149 PNP 5 GHz wideband transistor Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication PNP 5 GHz wideband transistor BFQ149 DESCRIPTION PINNING PNP transistor in a SOT89 envelope. PIN DESCRIPTION It is intended for use in Code: FG UHF applications such as broadband 1 emitter aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar 2 collector systems, spectrum analysers, etc., 3 base using SMD technology. 321 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-emitter voltage open base --- 15 V CEO I DC collector current --- 100 mA C P total power dissipation up to T = 135 C (note 1) -- 1W tot s h DC current gain I = - 70 mA V = - 10 V T = 25 C20 50 - FE C CE j f transition frequency I = - 75 mA V = - 10 V 45 - GHz T C CE f = 500 MHz T = 25 C j G maximum unilateral power gain I = - 50 mA V = - 10 V - 12 - dB UM C CE f = 500 MHz T = 25 C amb F noise gure I = - 50 mA V = - 10 V - 3.75 - dB C CE R =60 f = 500 MHz s T = 25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter -- 20 V CBO V collector-emitter voltage open base -- 15 V CEO V emitter-base voltage open collector --3V EBO I DC collector current -- 100 mA C I peak collector current f > 1 MHz -- 150 mA CM P total power dissipation up to T = 135 C (note 1) - 1W tot s T storage temperature - 65 150 C stg T junction temperature - 150 C j Note 1. T is the temperature at the soldering point of the collector tab. s Rev. 03 - 28 September 2007 2 of 7