BFQ18A,115 NXP

BFQ18A NPN 4 GHz wideband transistor Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 4 GHz wideband transistor BFQ18A DESCRIPTION PINNING NPN transistor in a plastic SOT89 PIN DESCRIPTION envelope intended for application in Code: FF thick and thin-film circuits. It is 1 emitter primarily intended for MATV purposes. 2 collector 3 base 321 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter - 25 V CBO V collector-emitter voltage open base - 18 V CEO I DC collector current - 150 mA C P total power dissipation up to T = 155 C (note 1) - 1W tot s f transition frequency I = 100 mA V = 10 V f = 500 MHz 4 - GHz T C CE T = 25 C j C feedback capacitance I = 0 V = 10 V f = 10.7 MHz 1.2 - pF re C CE d intermodulation distortion I = 80 mA V = 10 V R =75 -- 60 dB im C CE L V = 700 mV measured at o f = 793.25 MHz (p+q-r) LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 25 V CBO V collector-emitter voltage open base - 18 V CEO V emitter-base voltage open collector - 2V EBO I DC collector current - 150 mA C P total power dissipation up to T = 155 C (note 1) - 1W tot s T storage temperature - 65 150 C stg T junction temperature - 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s Rev. 03 - 28 September 2007 2 of 7