BFQ19 NPN 5 GHz wideband transistor Rev. 03 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication NPN 5 GHz wideband transistor BFQ19 DESCRIPTION PINNING NPN transistor in a SOT89 plastic PIN DESCRIPTION envelope intended for application in Code: FB thick and thin-film circuits. It is 1 emitter primarily intended for use in UHF and microwave amplifiers such as in aerial 2 collector amplifiers, radar systems, 3 base oscilloscopes, spectrum analysers etc. 321 The transistor features very low intermodulation distortion and high power gain. Due to its very high transition frequency, it also has Fig.1 SOT89. excellent wideband properties and low noise up to high frequencies. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-emitter voltage open base - 15 V CEO I DC collector current - 100 mA C P total power dissipation up to T = 145 C (note 1) - 1W tot s f transition frequency I = 50 mA V = 10 V f = 500 MHz 5.5 - GHz T c CE T =25 C j C feedback capacitance I = 10 mA V = 10 V f = 1 MHz 1.3 - pF re c CE T =25 C amb F noise gure I = 50 mA V = 10 V Z = opt. 3.3 - dB c CE s f = 500 MHz T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter - 20 V CBO V collector-emitter voltage open base - 15 V CEO V emitter-base voltage open collector - 3.3 V EBO I DC collector current - 100 mA C I peak collector current f > 1 MHz - 150 mA CM P total power dissipation up to T = 145 C (note 1) - 1W tot s T storage temperature - 65 150 C stg T junction temperature - 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s Rev. 03 - 28 September 2007 2 of 7