Product Information

BFQ67W,115

BFQ67W,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 10V 50mA 8GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0932 ea
Line Total: USD 279.6

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 3000
Multiples : 1
3000 : USD 0.0932
9000 : USD 0.0915

Read More Specifications

     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure Code: V2 High transition frequency 3 1 base handbook, 2 columns Gold metallization ensures 2emitter excellent reliability 3 collector SOT323 envelope. 12 DESCRIPTION Top view MBC870 NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV Fig.1 SOT323. tuners and RF portable communications equipment up to 2GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =15 mA V =5 V T =25 C60 100 FE C CE j f transition frequency I =15 mA V =8 V f = 2 GHz 8 GHz T C CE T =25 C amb G maximum unilateral power gain I =15 mA V =8 V f =1 GHz 13 dB UM c CE T =25 C amb F noise figure I =5 mA V =8 V f= 1 GHz 1.3 dB c CE LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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