BFQ67W,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFQ67W NPN 8 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67W FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure Code: V2 High transition frequency 3 1 base handbook, 2 columns Gold metallization ensures 2emitter excellent reliability 3 collector SOT323 envelope. 12 DESCRIPTION Top view MBC870 NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV Fig.1 SOT323. tuners and RF portable communications equipment up to 2GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =15 mA V =5 V T =25 C60 100 FE C CE j f transition frequency I =15 mA V =8 V f = 2 GHz 8 GHz T C CE T =25 C amb G maximum unilateral power gain I =15 mA V =8 V f =1 GHz 13 dB UM c CE T =25 C amb F noise figure I =5 mA V =8 V f= 1 GHz 1.3 dB c CE LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage open base 10 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2