BFR30,235 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BFR30 BFR31 N-channel field-effect transistors Product specification 1997 Dec 05 Supersedes data of April 1991NXP Semiconductors Product specification N-channel field-effect transistors BFR30 BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel 3 handbook, halfpage field-effect transistor in a plastic SOT23 package. d g s APPLICATIONS Low level general purpose amplifiers in thick and 12 thin-film circuits. Top view MAM385 PINNING - SOT23 Marking codes: BFR30: M1p. PIN SYMBOL DESCRIPTION BFR31: M2p. (1) 1 d drain Fig.1 Simplified outline and symbol. (1) 2 s source 3g gate Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage 25 V DS V gate-source voltage open drain 25 V GSO P total power dissipation T 40 C 250 mW tot amb I drain current V =0 V =10V DSS GS DS BFR30 4 10 mA BFR31 1 5 mA y common-source transfer admittance I =1 mA V =10V f=1kHz fs D DS BFR30 1 4 mS BFR31 1.5 4.5 mS 1997 Dec 05 2