Product Information

BFR30,235

BFR30,235 electronic component of NXP

Datasheet
RF JFET Transistors N-Channel Single +/- 25V 10mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.4498
10 : USD 0.3697
100 : USD 0.2256
1000 : USD 0.1746
2500 : USD 0.1565
10000 : USD 0.1565
20000 : USD 0.1541
50000 : USD 0.1505
100000 : USD 0.1457
N/A

Obsolete
     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Package Type
Pin Count
Drain Gate Voltage Max
Mounting
Continuous Drain Current
Operating Temperature Classification
Rad Hardened
Channel Type
Configuration
Gate Source Voltage Max
Drain Source Volt Max
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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DISCRETE SEMICONDUCTORS DATA SHEET BFR30 BFR31 N-channel field-effect transistors Product specification 1997 Dec 05 Supersedes data of April 1991NXP Semiconductors Product specification N-channel field-effect transistors BFR30 BFR31 DESCRIPTION Planar epitaxial symmetrical junction N-channel 3 handbook, halfpage field-effect transistor in a plastic SOT23 package. d g s APPLICATIONS Low level general purpose amplifiers in thick and 12 thin-film circuits. Top view MAM385 PINNING - SOT23 Marking codes: BFR30: M1p. PIN SYMBOL DESCRIPTION BFR31: M2p. (1) 1 d drain Fig.1 Simplified outline and symbol. (1) 2 s source 3g gate Note CAUTION 1. Drain and source are interchangeable. This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V drain-source voltage 25 V DS V gate-source voltage open drain 25 V GSO P total power dissipation T 40 C 250 mW tot amb I drain current V =0 V =10V DSS GS DS BFR30 4 10 mA BFR31 1 5 mA y common-source transfer admittance I =1 mA V =10V f=1kHz fs D DS BFR30 1 4 mS BFR31 1.5 4.5 mS 1997 Dec 05 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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