BFU610F,115 NXP

BFU610F NPN wideband silicon RF transistor Rev. 2 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Low noise high gain microwave transistor Noise figure (NF) = 1.7 dB at 5.8 GHz High associated gain 13.5 dB at 5.8 GHz 40 GHz f silicon technology T 1.3 Applications Low current battery equipped applications Low noise amplifiers for microwave communications systems Analog/digital cordless applications RKE AMR GPS ZigBee LTE, cellular, UMTS FM radio Mobile TV BluetoothBFU610F NXP Semiconductors NPN wideband silicon RF transistor 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base voltage open emitter - - 16 V CBO V collector-emitter voltage open base - - 5.5 V CEO V emitter-base voltage open collector - - 2.5 V EBO I collector current - 2 10 mA C 1 P total power dissipation T 90 C - - 136 mW tot sp h DC current gain I =1mA V =2V 90 135 180 FE C CE T =25 C j C collector-base V =2V f=1MHz - 19 - fF CBS CB capacitance f transition frequency I =4mA V =2V -15 - GHz T C CE f= 2GHz T =25 C amb 2 G maximum power gain I =5mA V =2V - 17.0 - dB p(max) C CE f= 5.8GHz T =25 C amb NF noise figure I =2mA V =2V -1.7 - dB C CE f= 5.8GHz = S opt T =25 C amb P output power at 1 dB I =10mA V =1.5 V -3 - dBm L(1dB) C CE gain compression Z =Z =50 S L f= 5.8GHz T =25 C amb 1 T is the temperature at the solder point of the emitter lead. sp 2 G is the maximum power gain, if K > 1. If K < 1 then G = Maximum Stable Gain (MSG). p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1emitter 34 4 2base 3emitter 2 4 collector 1, 3 2 1 mbb159 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU610F - plastic surface-mounted flat pack package reverse SOT343F pinning 4 leads BFU610F All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 11 January 2011 2 of 12