Product Information

BLF248,112

BLF248,112 electronic component of NXP

Datasheet
RF MOSFET Transistors RF DMOS 300W VHF P-P

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 245.3035 ea
Line Total: USD 245.3

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 245.3035
2 : USD 238.133

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLF248 VHF push-pull power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF push-pull power MOS transistor BLF248 FEATURES PIN CONFIGURATION High power gain Easy power control 12 Good thermal stability d halfpage 2 Gold metallization ensures g 2 excellent reliability. s g 1 d 1 55 DESCRIPTION 34 MBB157 MSB008 Dual push-pull silicon N-channel Top view enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF Fig.1 Simplified outline and symbol. frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange CAUTION package, with two ceramic caps. The This product is supplied in anti-static packing to prevent damage caused by mounting flange provides the electrostatic discharge during transport and handling. For further information, common source connection for the refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. transistors. WARNING PINNING - SOT262 A1 Product and environmental safety - toxic materials PIN DESCRIPTION This product contains beryllium oxide. The product is entirely safe provided 1 drain 1 that the BeO discs are not damaged. All persons who handle, use or dispose 2 drain 2 of this product should be aware of its nature and of the necessary safety 3 gate 1 precautions. After use, dispose of as chemical or special waste according to 4 gate 2 the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 5 source QUICK REFERENCE DATA RF performance at T = 25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) class-AB 225 28 300 >10 >55 175 28 300 typ. 13 typ. 67 2003 Sep 02 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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