BLF640U NXP

BLF640 Broadband power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1. Typical performance I = 100 mA T =25 C in a common source class-AB production test circuit. Dq case Test signal f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 50 1 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 39 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier carrier spacing 5 MHz. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for applications in the HF to 2200 MHz frequency range Broadcast driversBLF640 Broadband power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF640 - ceramic surface-mounted package 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P =11W 3.2 K/W th(j-case) case L(AV) 1 Thermal resistance is determined under specified RF operating conditions BLF640 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12