Product Information

BLF640U

BLF640U electronic component of NXP

Datasheet
RF MOSFET Transistors BLF640CDIP2TUBE-BULK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 34.1231 ea
Line Total: USD 34.12

0 - Global Stock
MOQ: 1  Multiples: 160
Pack Size: 160

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 160
1 : USD 34.1231
15 : USD 32.272

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF640 Broadband power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1. Typical performance I = 100 mA T =25 C in a common source class-AB production test circuit. Dq case Test signal f V P G ACPR DS L(AV) p D (MHz) (V) (W) (dB) (%) (dBc) 1 2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 50 1 1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 39 1 Test signal: 3GPP test model 1 64 DPCH PAR = 7.5 dB at 0.01 % probability on CCDF per carrier carrier spacing 5 MHz. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability No internal matching for broadband operation Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for applications in the HF to 2200 MHz frequency range Broadcast driversBLF640 Broadband power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF640 - ceramic surface-mounted package 2 leads SOT538A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to case T = 80 C P =11W 3.2 K/W th(j-case) case L(AV) 1 Thermal resistance is determined under specified RF operating conditions BLF640 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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