BLF578 NXP

BLF578 Power LDMOS transistor Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an I of 40 mA, a t of 100 s with of 20 %: Dq p Output power = 1200 W Power gain = 24 dB Efficiency = 71 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF578 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 12 1 2 drain2 5 3 gate1 3 3 4 4 gate2 5 4 1 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF578 - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 88 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF578 2 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 4 February 2010 2 of 14