Product Information

BT151-500L,127

BT151-500L,127 electronic component of NXP

Datasheet
SCRs RAIL-THYR AND TRIACS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7934 ea
Line Total: USD 0.79

4648 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4648 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.7682
10 : USD 0.6774
100 : USD 0.4669
500 : USD 0.4014
1000 : USD 0.3507
2000 : USD 0.322
5000 : USD 0.2979
10000 : USD 0.2933
25000 : USD 0.2852

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BT151-500L SCR 22 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring sensitive gate, good bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance. 2. Features and benefits Good bidirectional blocking voltage capability High surge current capability High thermal cycling performance Sensitive gate 3. Applications Ignition circuits Motor control Protection circuits Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 500 V DRM state voltage V repetitive peak reverse - - 500 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 120 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 132 A j(init) t = 8.3 ms p T junction temperature - - 125 C j I average on-state half sine wave T 109 C Fig. 1 - - 7.5 A T(AV) mb current I RMS on-state current half sine wave T 109 C Fig. 2 - - 12 A T(RMS) mb Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 5 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151-500L SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 335 V T = 125 C R = 100 200 1000 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-500L TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BT151-500L All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 22 February 2018 2 / 12

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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