DocumentNumber:MRF13750H NXPSemiconductors Rev. 1, 01/2018 Technical Data RFPowerLDMOSTransistors MRF13750H N--Channel Enhancement--ModeLateral MOSFETs MRF13750HS These750WCWtransistorsaredesignedforindustrial,scientificand medical(ISM)applicationsinthe700to1300MHzfrequencyrange.The transistors arecapableofCWorpulsepowerinnarrowbandoperation. TypicalPerformance: V =50Vdc DD 7001300MHz,750WCW,50V Frequency P G out ps D RFPOWERLDMOSTRANSISTORS (MHz) SignalType (W) (dB) (%) (1) 915 CW 750 19.3 67.1 (2) 915 Pulse 850 20.5 69.2 (100 sec,10%Duty Cycle) (3) 1300 CW 700 17.2 56.0 LoadMismatch/Ruggedness Frequency P Test in NI--1230H--4S SignalType VSWR (MHz) (W) Voltage Result MRF13750H (2) 915 Pulse >10:1 at all 15.9 Peak 50 NoDevice (100 sec,10% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 1. Measured in 915 MHz narrowband reference circuit (page 5). 2. Measured in 915 MHz narrowband production test fixture (page 11). 3. Measured in 1300 MHz narrowband reference circuit (page 8). NI--1230S--4S Features MRF13750HS Internally input pre--matched for ease of use Device can be used single--ended or in a push--pull configuration Characterizedfor 30to50V Suitable for linear applications with appropriate biasing IntegratedESD protection GateA DrainA 31 Recommendeddriver: MRFE6VS25GN (25W) Included in NXP product longevity program with assured supply for a minimum of 15years after launch GateB42 DrainB TypicalApplications 915MHz industrial heating/weldingsystems 1300MHz particleaccelerators (Top View) Note: Thebacksideof thepackageis the source terminalforthe transistor. Figure1.PinConnections 20172018NXPB.V. MRF13750HMRF13750HS RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +105 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 55, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 1333 W C D Derate above 25 C 6.67 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.15 C/W JC CW: Case Temperature 82 C, 700W CW, 50Vdc, I =150 mA, 915 MHz DQ(A+B) ThermalImpedance, Junction to Case Z 0.014 C/W JC Pulse: Case Temperature 76C, 850 W Peak, 100 sec Pulse Width, 10%Duty Cycle, 50 Vdc, I =200 mA, 915 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Charge Device Model(perJESD22--C101) C3, passes 1200 V Table4.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 105 Vdc (BR)DSS (V =0Vdc,I =10 A) GS D Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =55Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =105Vdc,V =0Vdc) DS GS OnCharacteristics (4) Gate Threshold Voltage V 1.3 1.72 2.3 Vdc GS(th) (V =10Vdc,I =275 Adc) DS D Gate Quiescent Voltage V 1.7 2.2 2.7 Vdc GS(Q) (V =50Vdc,I =200 mAdc, Measured in FunctionalTest) DD DQ(A+B) (4) Drain--Source On--Voltage V 0.1 0.23 0.6 Vdc DS(on) (V =10Vdc,I =2.8Adc) GS D (4,5) DynamicCharacteristics Reverse TransferCapacitance C 1.94 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 63.8 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at