Product Information

PSMN013-100YSEX

PSMN013-100YSEX electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET N-channel 100 V 13 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7798 ea
Line Total: USD 1.78

7035 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2910 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.941
3000 : USD 0.941
9000 : USD 0.941

2910 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.969

7035 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7798
10 : USD 1.5069
100 : USD 1.234
250 : USD 1.2221
500 : USD 1.0465
1500 : USD 0.9017
3000 : USD 0.8614
9000 : USD 0.8614

2910 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.9121

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part of Nexperia sNextPower Liv portfolio, the PSMN013-100YSE complements the latest hot-swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency DS(on) up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 100 C V = 10 V Fig. 1 - - 58 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 238 W tot mb Static characteristics R drain-source on-state V = 10 V I = 20 A T = 25 C - 11 13 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 20 A V = 50 V - 26 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 75 - nC G(tot)Nexperia PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 82 A - - 125 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100YSE LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100YSE 13100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 82 A D GS j PSMN013-100YSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 18 December 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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