PSMN013-100YSEX Nexperia

PSMN013-100YSEX electronic component of Nexperia
PSMN013-100YSEX Nexperia
PSMN013-100YSEX MOSFETs
PSMN013-100YSEX  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of PSMN013-100YSEX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN013-100YSEX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. PSMN013-100YSEX
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-channel 100 V 13 mo FET
Datasheet: PSMN013-100YSEX Datasheet (PDF)
Price (USD)
1: USD 2.2 ea
Line Total: USD 2.2 
Availability : 0
  
QtyUnit Price
1$ 2.2
10$ 1.488
100$ 1.0934
1500$ 1.0934
3000$ 1.0846

Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.8375


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.1255
10$ 1.9097
25$ 1.8574
100$ 1.6148
250$ 1.5825
500$ 1.5825
1000$ 1.5825


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.9391


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.587
10$ 0.5735
30$ 0.5657
100$ 0.5559


Availability 0
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2
10$ 1.488
100$ 1.0934
1500$ 1.0934
3000$ 1.0846


Availability 0
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.2525
5$ 2.0218
11$ 1.4791
30$ 1.3977


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 1.0249
3000$ 0.9343
9000$ 0.902


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.5109


Availability 0
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 1500
Multiples : 1500
QtyUnit Price
1500$ 0.4837
4500$ 0.4551

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN013-100YSEX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-100YSEX and other electronic components in the MOSFETs category and beyond.

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PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part of Nexperia sNextPower Liv portfolio, the PSMN013-100YSE complements the latest hot-swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency DS(on) up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 100 C V = 10 V Fig. 1 - - 58 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 238 W tot mb Static characteristics R drain-source on-state V = 10 V I = 20 A T = 25 C - 11 13 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 20 A V = 50 V - 26 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 75 - nC G(tot)Nexperia PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 82 A - - 125 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100YSE LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100YSE 13100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 82 A D GS j PSMN013-100YSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 18 December 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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