Product Information

PSMN4R3-100PS,127

PSMN4R3-100PS,127 electronic component of Nexperia

Datasheet
MOSFET N-Ch 100V 4.3 mo std level moSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1625 ea
Line Total: USD 3.16

4129 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4748 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 2.6611
10 : USD 2.6079
50 : USD 2.6079
100 : USD 2.6079

97 - WHS 2


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 5.7529
10 : USD 5.0358
30 : USD 4.6088
100 : USD 4.1777
500 : USD 3.9783
1000 : USD 3.8896

4129 - WHS 3


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 3.1625
10 : USD 2.875
50 : USD 2.8175
100 : USD 2.507
250 : USD 2.4955
500 : USD 2.3805
1000 : USD 2.2885
2500 : USD 2.2885

4748 - WHS 4


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3
Multiples : 1
3 : USD 2.6611
10 : USD 2.6079

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V - - 120 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 - - 338 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25 A T =100 C -6.6 7.8 m R DSon GS D j resistance see Figure 12 2 V =10V I =25 A T =25C -3.7 4.3 m GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75 A V =50V -49 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 170 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C - - 537 mJ DS(AL)S GS j(init) avalanche energy I = 120 A V 100 V D sup R =50 Unclamped GS 1 Continuous current limited by packagePSMN4R3-100PS Nexperia N-channel 100 V 4.3 m standard level MOSFET in TO-220 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN4R3-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 27 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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