X-On Electronics has gained recognition as a prominent supplier of PSMN7R6-100BSEJ mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN7R6-100BSEJ mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN7R6-100BSEJ Nexperia

PSMN7R6-100BSEJ electronic component of Nexperia
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Part No.PSMN7R6-100BSEJ
Manufacturer: Nexperia
Category:MOSFET
Description: NXP Semiconductors MOSFET N-channel 100 V 7.6 mo FET
Datasheet: PSMN7R6-100BSEJ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.852 ea
Line Total: USD 2.85

Availability - 2568
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 3.1271
10 : USD 3.0556
30 : USD 3.0086
100 : USD 2.9619

2568 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 2.852
10 : USD 2.4265
25 : USD 2.392
100 : USD 2.0125
250 : USD 1.9895
500 : USD 1.8975
800 : USD 1.6215
2400 : USD 1.5985
4800 : USD 1.5525

7760 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 800
Multiples : 800
800 : USD 1.8619
2400 : USD 1.784
4800 : USD 1.7311

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN7R6-100BSEJ from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN7R6-100BSEJ and other electronic components in the MOSFET category and beyond.

PSMN7R6-100BSE N-channel 100 V 7.6 m standard level MOSFET in D2PAK 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of Nexperia sNextPower Liv portfolio, the PSMN7R6-100BSE complements the latest hot-swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency DS(on) up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 100 C V = 10 V Fig. 1 1 - - 75 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 296 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 6.5 7.6 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 41 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 128 - nC G(tot)Nexperia PSMN7R6-100BSE N-channel 100 V 7.6 m standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 75 A - - 426 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 1 Continuous current limited by package 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 1 G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 1 It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R6-100BSE D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN7R6-100BSE PSMN7R6100BSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS PSMN7R6-100BSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 18 December 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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