Product Information

PSMN7R6-60BS,118

PSMN7R6-60BS,118 electronic component of Nexperia

Datasheet
MOSFET N-CH 60 V 7.8 MOHM MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3289 ea
Line Total: USD 1.33

6459 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6459 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3764
10 : USD 1.0501
100 : USD 0.948
250 : USD 0.9053
800 : USD 0.8329
2400 : USD 0.827
4800 : USD 0.8128

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

PSMN7R6-60BS N-channel 60 V 7.8 m standard level MOSFET in D2PAK Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --60 V DS j j I drain current T =25C V =10V see Figure 1 --92 A D mb GS P total power dissipation T =25C see Figure 2 - - 149 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T =25C -5.9 7.8 m DSon GS D j resistance see Figure 13 see Figure 9 Dynamic characteristics gate-drain charge V =10V I =25A V =30V - 10.6 - nC Q GD GS D DS see Figure 15 see Figure 14 Q total gate charge V =10V I =25A V =30V - 38.7 - nC G(tot) GS D DS see Figure 14 see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C I =92A --110 mJ DS(AL)S GS j(init) D drain-source V 100 V R =50 unclamped sup GS avalanche energyPSMN7R6-60BS Nexperia N-channel 60 V 7.8 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN7R6-60BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R =20k -60 V DGR GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -65 A D GS mb V =10V T =25C see Figure 1 -92 A GS mb I peak drain current pulsed t 10 s T =25C - 389 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 - 149 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 92 A S mb I peak source current pulsed t 10 s T = 25 C - 389 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =92A -110 mJ DS(AL)S GS j(init) D avalanche energy V 100 V R =50 unclamped sup GS PSMN7R6-60BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 2 March 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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