AFGB40T65SQDN IGBT for Automotive Applications, 650 V, 40 A, 2 D PAK Features Maximum Junction Temperature: T = 175C www.onsemi.com J High Speed Switching Series V = 1.6 V (Typ.) I = 40 A BV V TYP I MAX CES CE(sat) C CE(sat) C 100% of the Part are Dynamically Tested (Note 1) 650 V 1.6 V 160 A AECQ101 Qualified C These Devices are PbFree and are RoHS Compliant Typical Applications Automotive On Board Charger G Automotive DC/DC Converter for HEV E ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) J C Parameter Symbol Value Unit Collector to Emitter Voltage V 650 V CES G Gate-to-Emitter Voltage V 20 V GES E Transient Gate-to-Emitter Voltage V 30 V GES 2 D PAK3 CASE 418AJ Collector Current T = 25C I 80 A C C Collector Current T = 100C 40 A C MARKING DIAGRAM Pulsed Collector Current (Note 2) I 160 A CM Diode Forward Current T = 25C I 40 A C F Diode Forward Current T = 100C 20 A C Y&Z&3&K Pulsed Diode Maximum Forward I 160 A FM AFGB Current (Note 2) 40T65SQDN Maximum Power Dissipation P 238 W D T = 25C C Maximum Power Dissipation 119 W T = 100C C Operating Junction and Storage T , T 55 to 175 C J stg Y = ON Semiconductor Logo Temperature &Z = Assembly Plant Code &3 = 3-Digit Data Code Stresses exceeding those listed in the Maximum Ratings table may damage the &K = 2-Digit Lot Traceability Code device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AFGB40T65SQDN= Specific Device Code 1. V = 400 V, V = 15 V, I = 120A, R = 100 , Inductive Load. CC GE C G 2. Repetitive rating: pulse width limited by max. Junction temperature. 2 3. Surfacemounted on FR4 board using 1 in pad size, 1 oz Cu pad. ORDERING INFORMATION 4. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions Device Package Shipping noted. 2 AFGB40T65SQDN D PAK 800 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: December, 2018 Rev. 2 AFGB40T65SQDN/DAFGB40T65SQDN THERMAL CHARACTERISTICS Parameter Symbol Max Unit C/W Thermal Resistance Junction-to-Case, for IGBT R 0.63 JC Thermal Resistance Junction-to-Case, for Diode R 1.55 JC Thermal Resistance Junction-to-Ambient 40 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) C Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown V = 0 V, I = 1 mA 650 V BV CES GE C Voltage V/C Temperature Coefficient of I = 1 mA, Reference to 25C 0.6 C V / T CES J Breakdown Voltage Collector Cut-Off Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current V = V , V = 0 V nA I 400 GES GE GES CE ON CHARACTERISTICS 4.5 Gate Threshold Voltage V V = V , I = 40 mA 2.6 6.4 V GE(th) GE CE C Collector to Emitter Saturation V V I = 40 A, V = 15 V, T = 25C 1.6 2.1 CE(sat) C GE C Voltage 1.92 I = 40 A, V = 15 V, T = 175C V C GE C DYNAMIC CHARACTERISTIC pF V = 30 V, V = 0 V, f = 1 MHz 2495 Input Capacitance C CE GE ies 50 Output Capacitance C oes 9 Reverse Transfer Capacitance C res SWITCHING CHARACTERISTIC V = 400 V, I = 40 A, R = 6 , 17.6 ns Turn-On Delay Time t CC C G d(on) V = 15 V, Inductive Load, GE 19.2 ns T = 25C Rise Time t C r 75.2 ns Turn-Off Delay Time t d(off) 9.6 ns Fall Time t f 0.858 mJ Turn-On Switching Loss E on 0.229 mJ Turn-Off Switching Loss E off 1.087 mJ Total Switching Loss E ts V = 400 V, I = 40 A, R = 6 , 16 ns Turn-On Delay Time t CC C G d(on) V = 15 V, Inductive Load, GE 22.4 ns T = 175C Rise Time t C r 81.6 ns Turn-Off Delay Time t d(off) 20.8 ns Fall Time t f 1.14 mJ Turn-On Switching Loss E on 0.484 mJ Turn-Off Switching Loss E off 1.624 mJ Total Switching Loss E ts V = 400 V, I = 40 A, V = 15 V 76 nC Total Gate Charge Qg CE C GE 14 nC Gate to Emitter Charge Qge 17 nC Gate to Collector Charge Qgc www.onsemi.com 2