STGP20M65DF2 STMicroelectronics

STGP20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features High short-circuit withstand time TAB V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameters distribution Safer paralleling 3 2 1 Low thermal resistance TO-220 Soft and very fast recovery antiparallel diode C(2, TAB) Applications Motor control UPS G(1) PFC General-purpose inverters Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGP20M65DF2 Product summary Order code STGP20M65DF2 Marking G20M65DF2 Package TO-220 Packing Tube DS11374 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGP20M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE Continuous collector current at T = 25 C 40 A C I C Continuous collector current at T = 100 C 20 A C (1) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 40 A C I F Continuous forward current at T = 100 C 20 A C (1) I Pulsed forward current 80 A FP P Total dissipation at T = 25 C 166 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.9 C/W thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 62.5 C/W thJA DS11374 - Rev 3 page 2/16