STGB40H65FB STMicroelectronics

STGB40H65FB Datasheet Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Features TAB Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 2 3 Low saturation voltage: V = 1.6 V (typ.) I = 40 A 1 CE(sat) C Tight parameter distribution DPAK Safe paralleling Low thermal resistance C(2, TAB) Applications Photovoltaic inverters High frequency converters G(1) Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling E(3) operation. G1C2TE3 Product status link STGB40H65FB Product summary Order code STGB40H65FB Marking GB40H65FB Package DPAK Packing Tape and reel DS11724 - Rev 2 - February 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB40H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 80 C I A C Continuous collector current at T = 100 C 40 C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.53 thJC C/W R Thermal resistance junction-ambient 62.5 thJA DS11724 - Rev 2 page 2/17