CAT24C02YI-GT3JN ON Semiconductor

CAT24C02YI-GT3JN electronic component of ON Semiconductor
CAT24C02YI-GT3JN ON Semiconductor
CAT24C02YI-GT3JN EEPROM
CAT24C02YI-GT3JN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CAT24C02YI-GT3JN EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT24C02YI-GT3JN EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. CAT24C02YI-GT3JN
Manufacturer: ON Semiconductor
Category: EEPROM
Description: IC EEPROM 2KBIT 400KHZ 8TSSOP
Datasheet: CAT24C02YI-GT3JN Datasheet (PDF)
Price (USD)
3000: USD 0.63 ea
Line Total: USD 1890 
Availability : 0
  
QtyUnit Price
3000$ 0.63
3001$ 0.2992
6001$ 0.2959

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.63
3001$ 0.2992
6001$ 0.2959


Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.63
3001$ 0.2992
6001$ 0.2959

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CAT24C02YI-GT3JN from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT24C02YI-GT3JN and other electronic components in the EEPROM category and beyond.

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CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 2 16-Kb I C CMOS Serial CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 V CC Table 1. PIN FUNCTION Pin Name Function A0, A1, A2 Device Address Input SCL SDA Serial Data Input/Output SCL Serial Clock Input A , A , A CAT24Cxx SDA 2 1 0 WP Write Protect Input WP V Power Supply CC V Ground SS NC No Connect V SS The exposed pad for the TDFN/UDFN packages can be left floating or connected to Ground. Figure 1. Functional Symbol Table 2. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on any pin with respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. During input transitions, voltage undershoot on any pin should not exceed 1 V for more than 20 ns. Voltage overshoot on pins A , A , A 0 1 2 2 and WP should not exceed V + 1 V for more than 20 ns, while voltage on the I C bus pins, SCL and SDA, should not exceed the absolute CC maximum ratings, irrespective of V . CC Table 3. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 4. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +125C and V = 1.7 V to 5.5 V, T = 40C to +85C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Read Current Read, f = 400 kHz 1 mA CCR SCL I Write Current Write, f = 400 kHz 2 mA CCW SCL I Standby Current All I/O Pins at GND or V T = 40C to +85C 1 A SB CC A V 3.3 V CC T = 40C to +85C 3 A V > 3.3 V CC T = 40C to +125C 5 A I I/O Pin Leakage Pin at GND or V 2 A L CC V Input Low Voltage 0.5 0.3 x V V IL CC V Input High Voltage A , A , A and WP 0.7 x V V + 0.5 V IH 0 1 2 CC CC SCL and SDA 0.7 x V 5.5 CC V Output Low V > 2.5 V, I = 3 mA 0.4 OL CC OL Voltage V < 2.5 V, I = 1 mA 0.2 CC OL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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