Ordering number : ENA1331A ECH8410 N-Channel Power MOSFET ECH8410 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =6A 7.5 S DS D R (on)1 I =6A, V =10V 7.5 10 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =3A, V =4.5V 13 18.2 m DS D GS R (on)3 I =3A, V =4V 15.5 22 m DS D GS Input Capacitance Ciss 1700 pF Output Capacitance Coss V =10V, f=1MHz 300 pF DS Reverse Transfer Capacitance Crss 200 pF Turn-ON Delay Time t (on) 17 ns d Rise Time t 50 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 110 ns d Fall Time t 72 ns f Total Gate Charge Qg 31 nC Gate-to-Source Charge Qgs V =15V, V =10V, I =12A 5.5 nC DS GS D Gate-to-Drain Miller Charge Qgd 5.5 nC Diode Forward Voltage V I =12A, V =0V 0.8 1.2 V SD S GS Switching Time Test Circuit V =15V DD V IN 10V I =6A D 0V R =2.5 L V V D IN OUT PW=10s D.C.1% G P.G 50 ECH8410 S Ordering Information Device Package Shipping memo ECH8410-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1331-2/7